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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-27T09:57:53Z | - |
dc.date.available | 2023-10-27T09:57:53Z | - |
dc.date.issued | 2010 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/5594615 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12678 | - |
dc.description.abstract | Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F 16 CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to V dd /2. A five-stage ring oscillator is also demonstrated. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Circuits | en_US |
dc.subject | CMOS | en_US |
dc.subject | Inkjet | en_US |
dc.subject | Organic | en_US |
dc.title | Complementary Organic Circuits Using Evaporated F16CuPc and Inkjet Printing of PQT | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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