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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-27T09:57:53Z-
dc.date.available2023-10-27T09:57:53Z-
dc.date.issued2010-
dc.identifier.urihttps://ieeexplore.ieee.org/document/5594615-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12678-
dc.description.abstractOrganic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F 16 CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to V dd /2. A five-stage ring oscillator is also demonstrated.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectCircuitsen_US
dc.subjectCMOSen_US
dc.subjectInkjeten_US
dc.subjectOrganicen_US
dc.titleComplementary Organic Circuits Using Evaporated F16CuPc and Inkjet Printing of PQTen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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