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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-27T10:03:49Z | - |
dc.date.available | 2023-10-27T10:03:49Z | - |
dc.date.issued | 2010-09 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/5518393 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12680 | - |
dc.description.abstract | We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. Physical insight toward pulse-to-pulse instability is given. Both the current ( I TLP ) and time evolution of various events such as junction breakdown, parasitic bipolar triggering, and the base push-out effect are discussed in detail. Differences between the 2-D and 3-D simulation (modeling) approaches are presented, and the importance of 3-D technology-computer-aided-design-based modeling is discussed. Furthermore, a deeper physical insight toward the base push-out is given, which shows significant power dissipation due of space charge build-up, which is found at the onset of self-heating in the 2-D plane. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Base push-out | en_US |
dc.subject | Charge device model (CDM) | en_US |
dc.subject | Charge modulation | en_US |
dc.subject | Current filamentation | en_US |
dc.subject | Transient interferometric mapping (TIM) | en_US |
dc.title | On the Behavior of STI-Type DeNMOS Device Under ESD Conditions | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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