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Title: | On the Behavior of STI-Type DeNMOS Device Under ESD Conditions |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Base push-out Charge device model (CDM) Charge modulation Current filamentation Transient interferometric mapping (TIM) |
Issue Date: | Sep-2010 |
Publisher: | IEEE |
Abstract: | We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. Physical insight toward pulse-to-pulse instability is given. Both the current ( I TLP ) and time evolution of various events such as junction breakdown, parasitic bipolar triggering, and the base push-out effect are discussed in detail. Differences between the 2-D and 3-D simulation (modeling) approaches are presented, and the importance of 3-D technology-computer-aided-design-based modeling is discussed. Furthermore, a deeper physical insight toward the base push-out is given, which shows significant power dissipation due of space charge build-up, which is found at the onset of self-heating in the 2-D plane. |
URI: | https://ieeexplore.ieee.org/document/5518393 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12680 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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