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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, V. Ramgopal | - |
| dc.date.accessioned | 2023-10-27T11:10:50Z | - |
| dc.date.available | 2023-10-27T11:10:50Z | - |
| dc.date.issued | 2010-03 | - |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0026271410000053 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12687 | - |
| dc.description.abstract | A systematic study of the dependence of short-channel effects (SCEs) on the channel thickness (Tch) of double-gate MOSFETs revealed that there is a particular range of Tch in which SCEs are significantly degraded compared to those of conventional planar MOSFETs. This phenomenon was found to originate from the electric field penetrating the channel region from the drain due to the disappearance of a neutral region in the channel. This dependence of this phenomenon on device parameters such as the channel doping concentration (Nc), the equivalent oxide thickness (EOT) and the gate length (Lg) was examined. The degradation of SCEs due to an inappropriate Tch was found to become more significant as Nc and Lg are reduced. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.subject | EEE | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | Short-channel effects (SCEs) | en_US |
| dc.title | Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
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