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Title: | Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Drain-extended MOSFET (DeMOS) Hot carrier Input/output Lightly doped drain MOS (LDDMOS) Mixed-signal Reduced surface field (RESURF) |
Issue Date: | Feb-2010 |
Publisher: | IEEE |
Abstract: | In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. The mixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects. |
URI: | https://ieeexplore.ieee.org/document/5350732 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12691 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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