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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-28T04:17:40Z | - |
dc.date.available | 2023-10-28T04:17:40Z | - |
dc.date.issued | 2009-05 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/4812067 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12695 | - |
dc.description.abstract | In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain ( A v ) of - 1.7 and V OH and V OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Bootstrapping | en_US |
dc.subject | Inverters | en_US |
dc.subject | Organic field-effect transistor (OFET) | en_US |
dc.title | Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- k Gate Dielectric Material | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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