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Title: | Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- k Gate Dielectric Material |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Bootstrapping Inverters Organic field-effect transistor (OFET) |
Issue Date: | May-2009 |
Publisher: | IEEE |
Abstract: | In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain ( A v ) of - 1.7 and V OH and V OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations. |
URI: | https://ieeexplore.ieee.org/document/4812067 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12695 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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