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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12698
Title: Determining ionizing radiation using sensors based on organic semiconducting material
Authors: Rao, V. Ramgopal
Keywords: EEE
Ionizing radiation
Sensors
Organic field-effect transistor (OFET)
Issue Date: Mar-2009
Publisher: AIP
Abstract: The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.
URI: https://pubs.aip.org/aip/apl/article/94/12/123304/151860/Determining-ionizing-radiation-using-sensors-based
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12698
Appears in Collections:Department of Electrical and Electronics Engineering

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