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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12698
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-28T04:40:15Z-
dc.date.available2023-10-28T04:40:15Z-
dc.date.issued2009-03-
dc.identifier.urihttps://pubs.aip.org/aip/apl/article/94/12/123304/151860/Determining-ionizing-radiation-using-sensors-based-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12698-
dc.description.abstractThe use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.en_US
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectEEEen_US
dc.subjectIonizing radiationen_US
dc.subjectSensorsen_US
dc.subjectOrganic field-effect transistor (OFET)en_US
dc.titleDetermining ionizing radiation using sensors based on organic semiconducting materialen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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