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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-28T04:40:15Z | - |
dc.date.available | 2023-10-28T04:40:15Z | - |
dc.date.issued | 2009-03 | - |
dc.identifier.uri | https://pubs.aip.org/aip/apl/article/94/12/123304/151860/Determining-ionizing-radiation-using-sensors-based | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12698 | - |
dc.description.abstract | The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AIP | en_US |
dc.subject | EEE | en_US |
dc.subject | Ionizing radiation | en_US |
dc.subject | Sensors | en_US |
dc.subject | Organic field-effect transistor (OFET) | en_US |
dc.title | Determining ionizing radiation using sensors based on organic semiconducting material | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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