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Title: | Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Germanium (Ge) Hot carrier (HC) Impact ionization Negative bias temperature instability (NBTI) pMOSFET |
Issue Date: | May-2009 |
Publisher: | IEEE |
Abstract: | In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement. |
URI: | https://ieeexplore.ieee.org/abstract/document/4804776 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12699 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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