![DSpace logo](/jspui/image/logo.gif)
Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12699
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-28T04:42:40Z | - |
dc.date.available | 2023-10-28T04:42:40Z | - |
dc.date.issued | 2009-05 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/4804776 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12699 | - |
dc.description.abstract | In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: (1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; (2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and (3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Germanium (Ge) | en_US |
dc.subject | Hot carrier (HC) | en_US |
dc.subject | Impact ionization | en_US |
dc.subject | Negative bias temperature instability (NBTI) | en_US |
dc.subject | pMOSFET | en_US |
dc.title | Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.