Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12701
Title: | Explosive vapor sensor using poly (3-hexylthiophene) and CuII tetraphenylporphyrin composite based organic field effect transistors |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Vapor Sensor Organic field effect transistors (OFETs) |
Issue Date: | Dec-2008 |
Publisher: | AIP |
Abstract: | Organic field effect transistors based on poly(3-hexylthiophene) and CuII tetraphenylporphyrin composite were investigated as sensors for detection of vapors of nitrobased explosive compounds, viz., 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX), 2,4,6-trinitrotoluene (TNT), and dinitrobenzene, which are also strong oxidizing agents. Significant changes, suitable for sensor response, were observed in transistor “on” current (Ion) and conductance (S) after exposure. A similar device response was, however, not observed for oxidizing agents such as benzoquinone and benzophenone. The Fourier transform infrared spectrometry experiments supported the results, where exposure to RDX and TNT vapors resulted in a significant shift in IR peaks. |
URI: | https://pubs.aip.org/aip/apl/article/93/26/263306/118466/Explosive-vapor-sensor-using-poly-3-hexylthiophene http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12701 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.