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Title: | A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE MOSFETs |
Issue Date: | Feb-2009 |
Publisher: | Elsevier |
Abstract: | In developing the drain current model of a symmetrically driven, undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET), one encounters a transcendental equation relating the value of an intermediate variable β (which is related to the inversion charge areal density and also surface-potential) to the gate and drain voltages; as a result, it doesn’t have a closed form solution. From a compact modeling perspective, it is desirable to have closed form expressions in order to implement them in a circuit simulator. In this paper, we present an accurate closed form approximation for the inversion charge areal density, based on the Lambert-W function. We benchmark our approximation against other existing approximations and show that our approximation is computationally the most efficient and numerically the most robust, at a reduced but acceptable accuracy. Hence, it is suitable for use in implementing inversion charge based compact models. |
URI: | https://www.sciencedirect.com/science/article/abs/pii/S003811010800378X http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12703 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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