Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12706| Title: | Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Current Double-gate MOSFET (DGFET) Mobility Modeling MOSFETs Velocity saturation |
| Issue Date: | Aug-2008 |
| Publisher: | IEEE |
| Abstract: | A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. I d -V d , I d -V g , g m -V g , and g DS -V d comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown. |
| URI: | https://ieeexplore.ieee.org/document/4578848 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12706 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.