Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12706

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-10-28T07:22:31Z	-
dc.date.available	2023-10-28T07:22:31Z	-
dc.date.issued	2008-08	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/4578848	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12706	-
dc.description.abstract	A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. I d -V d , I d -V g , g m -V g , and g DS -V d comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Current	en_US
dc.subject	Double-gate MOSFET (DGFET)	en_US
dc.subject	Mobility	en_US
dc.subject	Modeling	en_US
dc.subject	MOSFETs	en_US
dc.subject	Velocity saturation	en_US
dc.title	Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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