Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12706
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-28T07:22:31Z | - |
dc.date.available | 2023-10-28T07:22:31Z | - |
dc.date.issued | 2008-08 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/4578848 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12706 | - |
dc.description.abstract | A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2. I d -V d , I d -V g , g m -V g , and g DS -V d comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Current | en_US |
dc.subject | Double-gate MOSFET (DGFET) | en_US |
dc.subject | Mobility | en_US |
dc.subject | Modeling | en_US |
dc.subject | MOSFETs | en_US |
dc.subject | Velocity saturation | en_US |
dc.title | Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.