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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12707
Title: On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack
Authors: Rao, V. Ramgopal
Keywords: EEE
Transistors
Semiconductor devices
Issue Date: Apr-2008
Publisher: AIP
Abstract: In this paper, we report the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide field effect transistors (pMOSFETs) with a Si passivated surface. The gate stack consists of HfO2∕SiO2 dielectric with TiN∕TaN metal gate. The observed temperature dependence of the gate current indicates that the dominant charge transport mechanism through the gate dielectric consists of Poole–Frenkel conduction. Gate current 1∕f noise is more than two orders higher in the case of Ge pMOSFETs when compared to reference Si pMOSFETs⁠. Ge outdiffusion into the gate oxide is the suspected cause for the enhanced Poole–Frenkel conduction and the high gate current 1∕f noise in Ge pMOSFETs⁠.
URI: https://pubs.aip.org/aip/apl/article/92/16/163508/334516/On-the-dc-and-noise-properties-of-the-gate-current
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12707
Appears in Collections:Department of Electrical and Electronics Engineering

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