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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-30T06:09:49Z | - |
dc.date.available | 2023-10-30T06:09:49Z | - |
dc.date.issued | 2008-01 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0040609007010024?via%3Dihub | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12709 | - |
dc.description.abstract | This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10–20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (< 90 °C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | EEE | en_US |
dc.subject | FETs | en_US |
dc.subject | HWCVD | en_US |
dc.subject | Dielectric | en_US |
dc.title | Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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