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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-30T09:23:31Z-
dc.date.available2023-10-30T09:23:31Z-
dc.date.issued2005-12-
dc.identifier.urihttps://ieeexplore.ieee.org/document/1546322-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12726-
dc.description.abstractA methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectAnalog/mixed-signal circuitsen_US
dc.subjectCircuit lifetimeen_US
dc.subjectNegative bias temperature instability (NBTI)en_US
dc.subjectpMOSFET degradationen_US
dc.subjectThreshold-voltage shiften_US
dc.titleNBTI degradation and its impact for analog circuit reliabilityen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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