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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-30T09:58:35Z-
dc.date.available2023-10-30T09:58:35Z-
dc.date.issued2005-09-
dc.identifier.urihttps://ieeexplore.ieee.org/document/1499000-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12728-
dc.description.abstractUsing detailed experimental data, we demonstrate that for the correct interpretation of negative bias temperature instability (NBTI) degradation behavior with stress time, it is essential to include the effect of trapping of hydrogen species in the oxide. A new oxide trap-assisted NBTI degradation model is proposed and shown to fit the experimental data very well. Our proposed model can also be used to explain the recently observed phenomenon of higher NBTI degradation for increasing nitrogen concentration in the oxide. We show from numerical calculations that, for higher nitrogen concentration at the interface, one would expect higher NBTI degradation, as also reported recently.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectHydrogen diffusionen_US
dc.subjectInterface trap generationen_US
dc.subjectNegative bias temperature instability (NBTI)en_US
dc.subjectOxide trapen_US
dc.titleA new oxide trap-assisted NBTI degradation modelen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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