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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12729| Title: | Power-area evaluation of various double-gate RF mixer topologies |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Device simulation Double-gate MOSFET (DG MOSFET) RF-Mixer MOSFETs |
| Issue Date: | Sep-2005 |
| Publisher: | IEEE |
| Abstract: | We analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer applications from the point of optimizing the transconductance gain, power consumption, and area. Mixer topologies using the 0.13-μm conventional MOSFETs, simultaneously driven DG MOSFETs (SDDG) and the independently driven DG MOSFETs (IDDG) are compared using extensive device simulations. In the frequency range 1-40 GHz, our simulation results show that the mixer circuits realized using the SDDG technologies show an order of magnitude lower power-area product, for a given transconductance gain, compared to the conventional and the IDDG technologies. |
| URI: | https://ieeexplore.ieee.org/document/1498992 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12729 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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