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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12737
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-30T10:48:43Z-
dc.date.available2023-10-30T10:48:43Z-
dc.date.issued2003-08-
dc.identifier.urihttps://ieeexplore.ieee.org/document/1222759-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12737-
dc.description.abstractIn this paper, we study the reliability of n-channel Metal-Nitride-Silicon FETs fabricated using ultrathin Jet Vapor Deposited (JVD) Silicon Nitride gate dielectric under constant voltage stressing. Due to the stress, shifts in threshold voltage and transconductance as well as interface state generation are observed. Our study shows that degradation is polarity dependent. MNSFETs show lower degradation when the applied stress voltage is positive. We have also compared the performance of MNSFETs with conventional MOSFETs under identical stress conditions. Under positive stressing, MNSFETs clearly outperform the MOSFETs but under negative stressing MNSFETs show more degradation.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectSiliconen_US
dc.subjectMOSFETsen_US
dc.subjectStressen_US
dc.subjectVoltageen_US
dc.subjectDegradationen_US
dc.subjectDielectricsen_US
dc.subjectCharge pumpsen_US
dc.subjectInterface statesen_US
dc.titleReliability of ultrathin JVD silicon nitride MNSFETs under high field stressingen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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