Analysis of Floating Body Effects in Thin Film Conventional and Single Pocket SOI MOSFETs using the GIDL Current Technique

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12747

Title:	Analysis of Floating Body Effects in Thin Film Conventional and Single Pocket SOI MOSFETs using the GIDL Current Technique
Authors:	Rao, V. Ramgopal
Keywords:	EEE Transistors MOSFETs Los Angeles Council Tunneling Leakage current Current measurement Low voltage CMOS technology
Issue Date:	Jul-2001
Publisher:	IEEE
Abstract:	In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain /spl beta/ has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.
URI:	https://ieeexplore.ieee.org/document/941497 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12747
Appears in Collections:	Department of Electrical and Electronics Engineering

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