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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-31T06:34:48Z | - |
dc.date.available | 2023-10-31T06:34:48Z | - |
dc.date.issued | 2001-04 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=915686 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12751 | - |
dc.description.abstract | Metal–nitride–semiconductor FETs (MNSFETs) having channel lengths down to 100 nm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Charge pumping | en_US |
dc.subject | Hot-carrier effect | en_US |
dc.subject | Jet vapor deposition (JVD) | en_US |
dc.subject | MOSFETs | en_US |
dc.subject | Silicon nitride | en_US |
dc.title | Performance and Hot-Carrier Reliability of 100 nm Channel Length Jet Vapor Deposited Si3N4 MNSFETs | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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