Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12751
Title: | Performance and Hot-Carrier Reliability of 100 nm Channel Length Jet Vapor Deposited Si3N4 MNSFETs |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Charge pumping Hot-carrier effect Jet vapor deposition (JVD) MOSFETs Silicon nitride |
Issue Date: | Apr-2001 |
Publisher: | IEEE |
Abstract: | Metal–nitride–semiconductor FETs (MNSFETs) having channel lengths down to 100 nm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs. |
URI: | https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=915686 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12751 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.