Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-10-31T07:17:02Z	-
dc.date.available	2023-10-31T07:17:02Z	-
dc.date.issued	2001	-
dc.identifier.uri	https://iopscience.iop.org/article/10.1143/JJAP.40.2621	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12757	-
dc.description.abstract	Sub-bandgap impact ionization is compared in 100 nm channel length conventional channel and laterally asymmetrical n-channel metal oxide semiconductor field effect transistor (MOSFET). An abnormal increase of the gate voltage at which the substrate current peaks is reported. The effect is enhanced in the case of laterally asymmetric channel devices. Experimental and simulation results are presented that suggest the role of inversion layer quantization as an energy gain mechanism.	en_US
dc.language.iso	en	en_US
dc.publisher	IOP	en_US
dc.subject	EEE	en_US
dc.subject	Impact ionization	en_US
dc.title	Comparison of Sub-Bandgap Impact Ionization in Sub-100 nm Conventional and Lateral Asymmetrical Channel nMOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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