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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12760| Title: | Exploration of Velocity Overshoot in a High-Performance Deep Sub-0.1- m SOI MOSFET with Asymmetric Channel Profile |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Asymmetric channel profile Deep-0.1-um MOSFETs |
| Issue Date: | Oct-1999 |
| Publisher: | IEEE |
| Abstract: | The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thinfilm silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 m. The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 106 cm/s for a device with Le = 0:08 m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths |
| URI: | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=791935 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12760 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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