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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12760
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-31T09:04:37Z-
dc.date.available2023-10-31T09:04:37Z-
dc.date.issued1999-10-
dc.identifier.urihttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=791935-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12760-
dc.description.abstractThe electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thinfilm silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 m. The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 106 cm/s for a device with Le = 0:08 m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengthsen_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectAsymmetric channel profileen_US
dc.subjectDeep-0.1-um MOSFETsen_US
dc.titleExploration of Velocity Overshoot in a High-Performance Deep Sub-0.1- m SOI MOSFET with Asymmetric Channel Profileen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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