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Title: | A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE MOSFETs Charge pumping (CP) Pumping technique |
Issue Date: | May-1999 |
Publisher: | Elsevier |
Abstract: | A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data. |
URI: | https://www.sciencedirect.com/science/article/abs/pii/S0038110198003268 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12763 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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