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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12765
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-31T09:16:44Z-
dc.date.available2023-10-31T09:16:44Z-
dc.date.issued1999-09-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S016793179900369X-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12765-
dc.description.abstractLateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 μm have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel VT profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 μm channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectCharge pumpingen_US
dc.subjectMOSFETsen_US
dc.titleA study of 100 nm channel length asymmetric channel MOSFET by using charge pumpingen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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