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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12766| Title: | Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE MOSFETs Electric fields |
| Issue Date: | May-1998 |
| Publisher: | Elsevier |
| Abstract: | We introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOSFETs) and show that significant improvements in terms of supply voltage, current and speed are achievable in such MOSFETs by employing a planar-doped-barrier MOSFET (PDBFET) concept. Investigation of electrical characteristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs. |
| URI: | https://www.sciencedirect.com/science/article/abs/pii/S004060909800474X http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12766 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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