Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-10-31T09:20:12Z	-
dc.date.available	2023-10-31T09:20:12Z	-
dc.date.issued	1998-05	-
dc.identifier.uri	https://www.sciencedirect.com/science/article/abs/pii/S004060909800474X	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12766	-
dc.description.abstract	We introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOSFETs) and show that significant improvements in terms of supply voltage, current and speed are achievable in such MOSFETs by employing a planar-doped-barrier MOSFET (PDBFET) concept. Investigation of electrical characteristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	EEE	en_US
dc.subject	MOSFETs	en_US
dc.subject	Electric fields	en_US
dc.title	Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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