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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12769
Title: Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field Effect Transistors
Authors: Rao, V. Ramgopal
Keywords: EEE
FET’s
Gallium compounds
Nitrogen compounds
Noise measurement
Issue Date: Dec-1998
Publisher: IEEE
Abstract: We have investigated noise characteristics of novel GaN/Al0:15Ga0:85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias VGS and the drain voltage VDS varying from the linear to the saturation regions of operation VDS > 5 V. Our results show that flicker, e.g., 1=f noise, is the dominant limiting noise of these devices; and the Hooge parameter is on the order of 10􀀀5 􀀀 10􀀀4. The gate voltage dependence of 1=f noise was observed in the linear region for all examined VGS and in the saturation region for VGS > 0. These results indicating low values of the Hooge parameter are important for microwave applications.
URI: https://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=735751
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12769
Appears in Collections:Department of Electrical and Electronics Engineering

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