High-field stressing of LPCVD gate oxides

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-10-31T10:54:14Z	-
dc.date.available	2023-10-31T10:54:14Z	-
dc.date.issued	1997-03	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/556088	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12771	-
dc.description.abstract	We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Temperature	en_US
dc.subject	Degradation	en_US
dc.subject	Dielectric substrates	en_US
dc.subject	Annealing	en_US
dc.subject	Thermal stresses	en_US
dc.subject	Electrodes	en_US
dc.subject	Oxidation	en_US
dc.subject	Capacitors	en_US
dc.title	High-field stressing of LPCVD gate oxides	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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