Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12773

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-10-31T10:59:47Z	-
dc.date.available	2023-10-31T10:59:47Z	-
dc.date.issued	1996-09	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/535335	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12773	-
dc.description.abstract	In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to /spl plusmn/2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Electron traps	en_US
dc.subject	Annealing	en_US
dc.subject	Nitrogen dioxide	en_US
dc.subject	MOS capacitors	en_US
dc.subject	Semiconductor device modeling	en_US
dc.title	Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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