Organic field effect transistors for explosive and radiation dosimetry applications

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-01T09:32:41Z	-
dc.date.available	2023-11-01T09:32:41Z	-
dc.date.issued	2016-11	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/7808602	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12785	-
dc.description.abstract	This paper presents a brief overview of an Organic field effect transistor (OFET) based sensor applications. It highlights recent progress in the field of gas sensing and ionizing radiation sensing using OFETs. Besides step-by-step improvement of conventional devices, novel materials and novel approaches for OFET based gas and radiation sensing are discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Organic field effect transistors (OFETs)	en_US
dc.subject	Gas sensing	en_US
dc.subject	Radiation sensing	en_US
dc.title	Organic field effect transistors for explosive and radiation dosimetry applications	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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