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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12788| Title: | Porphyrin induced changes in charge transport of graphene FET |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Graphene Logic gates Sensors Two dimensional displays Chemicals Optical device fabrication |
| Issue Date: | 2016 |
| Publisher: | IEEE |
| Abstract: | The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p-type doping in graphene. |
| URI: | https://ieeexplore.ieee.org/document/7751514 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12788 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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