Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12788Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, V. Ramgopal | - |
| dc.date.accessioned | 2023-11-01T10:06:14Z | - |
| dc.date.available | 2023-11-01T10:06:14Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/7751514 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12788 | - |
| dc.description.abstract | The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)-TTPOH) and its free base counterpart. We propose that, the porphyrin induces p-type doping in graphene. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Graphene | en_US |
| dc.subject | Logic gates | en_US |
| dc.subject | Sensors | en_US |
| dc.subject | Two dimensional displays | en_US |
| dc.subject | Chemicals | en_US |
| dc.subject | Optical device fabrication | en_US |
| dc.title | Porphyrin induced changes in charge transport of graphene FET | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.