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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-11-01T10:12:35Z | - |
dc.date.available | 2023-11-01T10:12:35Z | - |
dc.date.issued | 2017 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8017111 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12790 | - |
dc.description.abstract | A novel process for self-assembly of metal-porphyrins on oxide dielectrics is developed and utilized for continuous work function tuning. Simply by changing the central metal atom present at the core of porphyrin helps change the dipole moment at the metal-dielectric interface leading to change in work function. Further the development of vapor phase process makes the process of the self-assembly easy to integrate with the CMOS processes. The highly selective and pattern enabled process shows great potential for controllable work function tuning for metal gate nano-scale technologies. The fine tuning is done by using zinc, nickel and copper porphyrin self-assembled monolayers formed at the metal-dielectric interface using a vapor phase approach. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Work function | en_US |
dc.subject | Self-assembly | en_US |
dc.subject | Vapor phase | en_US |
dc.subject | Dipole moment | en_US |
dc.title | Vapor phase self-assembly of metal-porphyrins for controllable work function tuning | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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