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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-11-01T10:29:44Z-
dc.date.available2023-11-01T10:29:44Z-
dc.date.issued2016-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7589436-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12791-
dc.description.abstractAs the CMOS technology enters into the sub 10 nm node, in order to reap the benefits of scaling, different techniques, materials and processes are required Various issues of reliability, variability and power issues are a challenge with the miniaturization of devices. Integration of bottom up processes becomes essential for meeting the scaling targets with respect to the material thickness and variability requirements. In the present work, we demonstrate the use of self-assembled monolayers for addressing the reliability and functionality issues in nano-scale CMOS.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectSelf-assembled monolayer (SAM)en_US
dc.subjectNano-scaleen_US
dc.subjectCMOSen_US
dc.subjectCopper diffusionen_US
dc.subjectWork functionen_US
dc.titleSelf assembled monolayer applications for nano-scale CMOSen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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