A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-02T05:25:15Z	-
dc.date.available	2023-11-02T05:25:15Z	-
dc.date.issued	2016-03	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/7434944	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12798	-
dc.description.abstract	In this paper, we present a fully integrated radio-frequency (RF) power amplifier (PA) using high voltage STI type DeNMOS device in standard 28nm CMOS technology. The device is fully compatible with scaled CMOS process technologies with minor cost penalties. The device prototype was fabricated in 28nm CMOS process and packaged in commercially available ball-grid-array (BGA) package to mimic real application conditions. Complete power amplifier circuit, made on low-loss laminate using this BGA package, is also presented. Packaged RF PA achieves 19dBm of output power at frequency of 1GHz with high linearity.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Drain Extended MOS	en_US
dc.subject	Shallow-trench-isolation (STI)	en_US
dc.subject	System-on-chip (SoC)	en_US
dc.subject	RF Power Amplifier	en_US
dc.title	A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology Mounted in BGA Package	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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