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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12801
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-11-02T06:00:33Z-
dc.date.available2023-11-02T06:00:33Z-
dc.date.issued2015-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7388659-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12801-
dc.description.abstractPentacene-based Organic Field Effect Transistors (OFETs) are promising platforms for sensing and computing applications. However, due to the chemical reactivity of the organic semiconductor, electrodes cannot be lithographically patterned after the semiconductor is deposited. Deposition of electrodes before the semiconductor material, on the other hand leads to an interface degradation that impacts performance of the organic transistor. In this work, we show for the first time application of porphyrin self-assembled monolayers (SAMs) for work function tuning of metal source/drain electrodes for organic transistor applications. We report the effect of various metal complexed porphyrin SAMs on the surface energy of the electrode and morphology of organic semiconductor and investigate the physical properties as well as electrical characteristics of OFETs with these SAMs.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectContacten_US
dc.subjectWork Function Engineeringen_US
dc.subjectPorphyrinen_US
dc.subjectPentaceneen_US
dc.subjectOrganic field-effect transistor (OFET)en_US
dc.titleSource/drain engineering in OFETs using self assembled monolayers of metal complexed porphyrinsen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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