Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12810
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-11-02T09:20:51Z | - |
dc.date.available | 2023-11-02T09:20:51Z | - |
dc.date.issued | 2013 | - |
dc.identifier.uri | https://pubs.aip.org/aip/apl/article/102/6/064101/26033/Al-doped-ZnO-thin-film-transistor-embedded-micro | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12810 | - |
dc.description.abstract | In this work, an aluminium-doped zinc oxide (AZO) thin film transistor, embedded in a polymer micro-cantilever, is demonstrated for nano-mechanical sensing applications. This device senses the surface stress due to a change in the carrier mobility of the semi-conducting layer. Due to the low Young's modulus and high strain sensitivity of the AZO layer, this micro-cantilever shows a deflection sensitivity of 116 ppm per nanometer of deflection. Also, mechanical characterization of these devices shows that the resonance frequency is in the range of a few tens of kilohertz which is suitable for sensor applications. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AIP | en_US |
dc.subject | EEE | en_US |
dc.subject | ZnO | en_US |
dc.subject | Micro-cantilever | en_US |
dc.subject | Piezoresistive sensing | en_US |
dc.subject | Sensors | en_US |
dc.title | Al-doped ZnO thin-film transistor embedded microcantilever as a piezoresistive sensor | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.