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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-11-02T09:20:51Z-
dc.date.available2023-11-02T09:20:51Z-
dc.date.issued2013-
dc.identifier.urihttps://pubs.aip.org/aip/apl/article/102/6/064101/26033/Al-doped-ZnO-thin-film-transistor-embedded-micro-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12810-
dc.description.abstractIn this work, an aluminium-doped zinc oxide (AZO) thin film transistor, embedded in a polymer micro-cantilever, is demonstrated for nano-mechanical sensing applications. This device senses the surface stress due to a change in the carrier mobility of the semi-conducting layer. Due to the low Young's modulus and high strain sensitivity of the AZO layer, this micro-cantilever shows a deflection sensitivity of 116 ppm per nanometer of deflection. Also, mechanical characterization of these devices shows that the resonance frequency is in the range of a few tens of kilohertz which is suitable for sensor applications.en_US
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectEEEen_US
dc.subjectZnOen_US
dc.subjectMicro-cantileveren_US
dc.subjectPiezoresistive sensingen_US
dc.subjectSensorsen_US
dc.titleAl-doped ZnO thin-film transistor embedded microcantilever as a piezoresistive sensoren_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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