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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12815
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-11-02T10:14:42Z-
dc.date.available2023-11-02T10:14:42Z-
dc.date.issued2012-01-
dc.identifier.issnhttps://ieeexplore.ieee.org/document/6123619-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12815-
dc.description.abstractThis paper presents a micro cantilever based piezo-resistive sensor and its fabrication process along with two different techniques for signal conditioning of sensor output aimed for artificial nose applications. The proposed micro-cantilevers feature a special coating of 6-Marcaptonicotonic acid (6-MNA) on one side of the cantilever which leads to a selective reaction of the target analyte molecules with the functionalized cantilever surface. Two signal conditioning schemes, a novel current excitation method and a resistance to frequency conversion (RFC) method using a new proposed circuit are implemented to precisely read the piezo-resistance changes. Current excitation method is implemented using commercial ICs while RFC method is implemented using a low-power test chip constituting of instrumentation amplifier, buffer and comparator in 180nm mixed-mode CMOS technology. It is shown that the implemented RFC method provides a resolution of 5ppm and is useful for low-cost on-chip measurements involving the piezo-resistive sensors. Implemented current excitation method provides measurement resolution of 40 parts per billion with minimum SNR value of 5 dB which is better than previously-reported values.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectFrequency measurementen_US
dc.subjectBridge circuitsen_US
dc.subjectCurrent measurementen_US
dc.subjectTemperature measurementen_US
dc.subjectSensitivityen_US
dc.subjectSemiconductor device measurementen_US
dc.titlePiezoresistive 6-MNA coated microcantilevers with signal conditioning circuits for electronic noseen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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