Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12823| Title: | 3D TCAD based approach for the evaluation of nanoscale devices during ESD failure |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Electrostatic discharge (ESD) Space charge modulation Thermal failure Moving filaments |
| Issue Date: | Nov-2010 |
| Publisher: | IEEE |
| Abstract: | This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy of predicted ESD figures of merit are discussed. Moreover, various devices options, have been evaluated from 3D TCAD simulations. |
| URI: | https://ieeexplore.ieee.org/abstract/document/5682919 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12823 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.