3D TCAD based approach for the evaluation of nanoscale devices during ESD failure

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-02T10:52:01Z	-
dc.date.available	2023-11-02T10:52:01Z	-
dc.date.issued	2010-11	-
dc.identifier.uri	https://ieeexplore.ieee.org/abstract/document/5682919	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12823	-
dc.description.abstract	This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy of predicted ESD figures of merit are discussed. Moreover, various devices options, have been evaluated from 3D TCAD simulations.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Electrostatic discharge (ESD)	en_US
dc.subject	Space charge modulation	en_US
dc.subject	Thermal failure	en_US
dc.subject	Moving filaments	en_US
dc.title	3D TCAD based approach for the evaluation of nanoscale devices during ESD failure	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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