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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12824| Title: | On the Transient behavior of various drain extended MOS devices under the ESD stress condition |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Drain Extended MOS Electrostatic discharge (ESD) TIM Base push-out Current filamentation |
| Issue Date: | 2010 |
| Publisher: | IEEE |
| Abstract: | This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies. |
| URI: | https://ieeexplore.ieee.org/document/5682922 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12824 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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