On the Transient behavior of various drain extended MOS devices under the ESD stress condition

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-02T10:56:54Z	-
dc.date.available	2023-11-02T10:56:54Z	-
dc.date.issued	2010	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/5682922	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12824	-
dc.description.abstract	This paper presents ESD evaluation of various nanoscale drain extended MOS devices. Current and time evolution of current filaments formed under the ESD stress conditions are investigated. A complete picture of device's behavior at the onset of space charge modulation and the evolution of current filamentation is discussed based on Transient Interferometric mapping studies.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Drain Extended MOS	en_US
dc.subject	Electrostatic discharge (ESD)	en_US
dc.subject	TIM	en_US
dc.subject	Base push-out	en_US
dc.subject	Current filamentation	en_US
dc.title	On the Transient behavior of various drain extended MOS devices under the ESD stress condition	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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