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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/12829| Title: | On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE Drain-extended MOSFET (DeMOS) ESD Failure Space charge buildup Pulse-to-pulse instability |
| Issue Date: | May-2010 |
| Publisher: | IEEE |
| Abstract: | We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called “week NPN action” and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of ~5X in failure threshold (I T2 ) and ~2X in ESD window without degrading its I/O performance. |
| URI: | https://ieeexplore.ieee.org/document/5488723 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12829 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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