On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-11-02T11:19:51Z	-
dc.date.available	2023-11-02T11:19:51Z	-
dc.date.issued	2010-05	-
dc.identifier.uri	https://ieeexplore.ieee.org/document/5488723	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12829	-
dc.description.abstract	We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called “week NPN action” and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of ~5X in failure threshold (I T2 ) and ~2X in ESD window without degrading its I/O performance.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Drain-extended MOSFET (DeMOS)	en_US
dc.subject	ESD Failure	en_US
dc.subject	Space charge buildup	en_US
dc.subject	Pulse-to-pulse instability	en_US
dc.title	On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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