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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12833| Title: | Filament study of STI type drain extended NMOS device using transient interferometric mapping |
| Authors: | Rao, V. Ramgopal |
| Keywords: | EEE MOS devices Fingers Current density Electric breakdown CMOS technology Nanoelectronics Current distribution Impact ionization |
| Issue Date: | Dec-2009 |
| Publisher: | IEEE |
| Abstract: | We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X. |
| URI: | https://ieeexplore.ieee.org/document/5424337 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12833 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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